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DOD70N07 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD70N07 product

DOD70N07

FETs

N-channel MOSFET70 V70 A8.6 mΩ maxTO-252Power MOSFET

DOD70N07 is a 70 V N-channel TO-252 power MOSFET with 8.6 mΩ maximum RDS(on) at 10 V gate drive and a 70 A continuous-current rating at TC=25°C.

Best for

  • 70 V-class power switching with 10 V gate drive
  • Space-conscious TO-252 power stages

Avoid if

  • A guaranteed low RDS(on) value is required at logic-level gate drive
  • Compliance or lifecycle documentation is mandatory but unavailable

Check before use

  • Confirm thermal performance in the final PCB and enclosure
  • Confirm peak current and avalanche conditions
  • Confirm current procurement status and compliance declarations

Key specifications

Drain-source voltage
70 V
Continuous drain current
70 A at TC=25°C
RDS(on)
8.6 mΩ max at VGS=10 V, ID=30 A
Total gate charge
33 nC typ
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingGeneral electronic control

Datasheet

80c0753f687307673f15808a4e222316_DOD70N07.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD70N07: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD70N07 is a DOINGTER N-channel trench power MOSFET in a TO-252 package. It is rated for 70 V drain-source voltage and 70 A continuous drain current at TC=25°C.