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DOD7N15 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD7N15 product

DOD7N15

FETs

N-channel MOSFET150 VTO-252Power switching

DOD7N15 is a 150 V N-channel MOSFET in a TO-252 package. It is specified for 7 A continuous drain current at TC=25 °C and 290 mΩ maximum RDS(on) at VGS=10 V.

Best for

  • 150 V MOSFET switching stages
  • Compact power switching designs using a TO-252 package

Avoid if

  • The design requires a specified RDS(on) at a gate voltage other than 10 V
  • Verified lifecycle, compliance, or package dimensions are mandatory and unavailable

Check before use

  • Gate-drive level and maximum VGS
  • Junction temperature and thermal resistance
  • Safe operating area and pulsed-current conditions
  • Reverse-diode requirements

Key specifications

Channel
N-channel
Drain-source voltage
150 V
Continuous drain current
7 A at TC=25 °C
RDS(on)
290 mΩ max. at VGS=10 V, ID=5 A
Gate charge
15.5 nC typ.

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switching

Datasheet

d72bd0eafa4487d2d889667da9e5de08_DOD7N15.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD7N15: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD7N15 is an N-channel power MOSFET with a 150 V drain-source rating, a 7 A continuous drain-current rating at TC=25 °C, and a TO-252 package.