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DOD80N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD80N03 product

DOD80N03

MOSFETs - Single

30 V MOSFETN-channelTO-2525 mΩ max80 Apower switching

DOD80N03 is a 30 V N-channel TO-252 MOSFET for low-voltage power switching, specified at 80 A continuous drain current and 5 mΩ maximum RDS(on) with a 10 V gate drive.

Best for

  • Low-voltage power switches using a 10 V gate drive
  • Compact TO-252 power stages where thermal performance is designed into the PCB

Avoid if

  • The application requires a verified logic-level low RDS(on) specification below 4.5 V gate drive
  • A formal automotive, RoHS, REACH, MSL, or lifecycle declaration is mandatory

Check before use

  • Confirm the exact TO-252 mechanical outline and PCB footprint
  • Derate current using the actual case and junction temperatures
  • Confirm voltage transients remain below the 30 V VDS rating

Key specifications

Drain-source voltage
30 V
Continuous drain current
80 A at TC=25°C
Maximum RDS(on)
5 mΩ at VGS=10 V, ID=30 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingMotor control switching stagesGeneral DC power stages

Datasheet

7f18b6dd16c96dcc1a3b3713d9e57ac5_DOD80N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD80N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD80N03 is a DOINGTER N-channel trench power MOSFET in a TO-252 surface-mount package. It has a 30 V drain-source rating and is intended for low-voltage power switching.