DOD80N06 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD80N06 product

DOD80N06 is a 60 V N-channel TO-252 MOSFET for low-voltage, high-current switching, specified at 80 A and 6.5 mΩ maximum RDS(on) with a 10 V gate drive.

Best for

60 V low-side switching
High-current compact power stages
Applications with 10 V gate drive

Avoid if

Drain-source voltage can exceed 60 V
Thermal performance cannot be validated for the required load current
A guaranteed logic-level gate drive below 4.5 V is required

Check before use

RDS(on) condition at the actual gate-drive voltage
TO-252 package-outline variant and PCB footprint
Junction temperature and transient thermal impedance
Switching losses at the intended frequency

Key specifications

Drain-source voltage: 60 V
Continuous drain current: 80 A at TC=25°C
On-resistance: 6.5 mΩ max at VGS=10 V, ID=20 A
Package: TO-252

Compliance & Environment

RoHS: -
REACH: -
MSL: MSL 3
ECCN: -
HTSUS: -

Application

Low-voltage power switchingGeneral high-current switching

Datasheet

956fcebb574a0565ab0e2bc0aec826d8_DOD80N06.pdf

800 KB

CAD Models

Download ECAD models for DOD80N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD80N06 is a DOINGTER N-channel trench MOSFET supplied in a TO-252 surface-mount package. Its drain-source voltage rating is 60 V.