DOD85N04 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD85N04 product

DOD85N04 is a 40 V N-channel TO-252 MOSFET for low-voltage power switching where low on-resistance and moderate gate charge are important.

Best for

Low-voltage power switching
Low-side MOSFET stages
Compact TO-252 power designs

Avoid if

Drain-source voltage can approach or exceed 40 V
The PCB cannot provide adequate heat removal
A verified compliance or lifecycle declaration is required

Check before use

Use the maximum, not typical, RDS(on) value for loss calculations
Confirm the applicable TO-252 outline variant and footprint
Validate gate-drive level against the required on-resistance

Key specifications

Drain-source voltage: 40 V
Continuous drain current: 85 A at TC=25°C
RDS(on): 3.3 mΩ typ, 4.2 mΩ max at VGS=10 V
Total gate charge: 25 nC typ
Package: TO-252

Compliance & Environment

RoHS: -
REACH: -
MSL: MSL 3
ECCN: -
HTSUS: -

Application

Low-voltage power switchingIndustrial DC load controlGeneral MOSFET switching stages

Datasheet

c45f3087c4fb95b977b8717994b8b120_DOD85N04.pdf

800 KB

CAD Models

Download ECAD models for DOD85N04: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD85N04 is a DOINGTER N-channel MOSFET using SGT trench technology. It has a 40 V drain-source rating and is supplied in a 3-lead TO-252 package.