For BusinessPricing
Request a demo

DOD8N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD8N06 product

DOD8N06

FETs

N-channel MOSFET60 V8 ATO-252Power switching

DOD8N06 is a 60 V N-channel TO-252 MOSFET for general power switching, specified for 8 A continuous drain current at TC=25°C and 100 mΩ maximum RDS(on) with a 10 V gate drive.

Best for

  • 60 V low-side power switching
  • General DC load control
  • Compact TO-252 power stages

Avoid if

  • The application requires guaranteed low RDS(on) with gate drive below 4.5 V
  • The circuit can exceed the 60 V drain-source rating
  • Qualification or compliance documentation is mandatory but unavailable

Check before use

  • Gate-drive voltage and gate-source transient limits
  • PCB copper area and junction temperature
  • Safe operating area during switching and fault events

Key specifications

Drain-source voltage
60 V
Continuous drain current
8 A at TC=25°C
RDS(on)
100 mΩ max at VGS=10 V, ID=3 A
Package
TO-252, 3-pin
Gate-source limit
±20 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingIndustrial load switchingConsumer power circuits

Datasheet

26f321246835d25e7cf72e44c43fb44f_DOD8N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD8N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD8N06 is a 60 V N-channel trench power MOSFET from DOINGTER in a 3-pin TO-252 package. Its drain, gate, and source pins are identified as pin 2, pin 1, and pin 3 respectively.