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DOD90N02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD90N02 product

DOD90N02

FETs

N-channel MOSFET20 V90 A3.5 mΩTO-252

DOD90N02 is a 20 V N-channel MOSFET in TO-252 with 3.5 mΩ maximum RDS(on) at 4.5 V gate drive and 90 A continuous current rating at TC=25°C.

Best for

  • Low-voltage power switching where a 20 V MOSFET is sufficient
  • Applications using approximately 4.5 V gate drive

Avoid if

  • Drain-source voltage can exceed 20 V
  • Package thermal capability is not validated for the required continuous current

Check before use

  • RDS(on) at the actual gate-drive voltage and operating temperature
  • TO-252 thermal layout and case-temperature derating
  • Compliance and lifecycle status

Key specifications

MOSFET type
N-channel
Drain-source voltage
20 V
Continuous drain current
90 A at TC=25°C
Maximum RDS(on)
3.5 mΩ at VGS=4.5 V, ID=30 A
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingLoad switching

Datasheet

a84ff8bbc3e01db93da1903ffa293ef0_DOD90N02.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD90N02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD90N02 is a DOINGTER N-channel trench power MOSFET supplied in a 3-pin TO-252 package. It has a 20 V drain-source voltage rating and is intended for low-voltage power switching.