DOD9N20 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD9N20 product

DOD9N20 is a 200 V N-channel MOSFET rated for 9 A continuous drain current at TC = 25 °C and specified at up to 0.3 ohm RDS(on) with a 10 V gate drive.

Best for

General power switching
Circuits requiring a 200 V N-channel MOSFET

Avoid if

The design requires a specified logic-level RDS(on) rating
Verified lifecycle or compliance data is mandatory

Check before use

Gate-drive voltage
Case temperature and thermal resistance
Maximum switching voltage and current

Key specifications

VDS: 200 V
ID: 9 A at TC = 25 °C
RDS(on): 0.3 ohm max at VGS = 10 V
Package: TO-252

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switchingIndustrial switching

Datasheet

36ff26002edf3ccf09cdcd1bec437f23_DOD9N20.pdf

800 KB

CAD Models

Download ECAD models for DOD9N20: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD9N20 is a DOINGTER N-channel power MOSFET in a TO-252 package. Its drain-source voltage rating is 200 V.