DON100N03 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DON100N03 product

DON100N03 is a 30 V N-channel power MOSFET rated at 100 A under the datasheet test condition, with 3 mΩ typical RDS(on) at 10 V gate drive.

Best for

low-voltage power switching
compact surface-mount power stages

Avoid if

the application requires more than a 30 V drain-source rating
thermal design cannot support the intended current

Check before use

RDS(on) at the actual gate voltage and temperature
PCB copper, package thermal path, and junction temperature
body-diode and switching behavior in the target topology

Key specifications

Channel: N-channel
VDS: 30 V
ID: 100 A at TC=25 °C
RDS(on): 3 mΩ typ. at VGS=10 V
Package: DFN5×6-8

Compliance & Environment

RoHS: -
REACH: -
MSL: MSL3
ECCN: -
HTSUS: -

Application

Low-voltage power switchingCompact load switching

Datasheet

20cacba792f37ffd7f64d63171229520_DON100N03.pdf

800 KB

CAD Models

Download ECAD models for DON100N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel trench power MOSFET with a 30 V drain-source rating, an 8-pin DFN5×6 package, and typical 3 mΩ on-resistance at VGS=10 V.