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DON100N04 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON100N04 product

DON100N04

MOSFETs - Single

N-channel MOSFET40 V MOSFETDFN5*6-83.5 mΩPower switching

DON100N04 is a 40 V N-channel DFN power MOSFET specified for low-voltage, high-current switching. It has 3.5 mΩ maximum RDS(on) at 10 V gate drive and 35 A drain current.

Best for

  • 40 V or lower power rails
  • High-current low-side switching
  • Compact DC power switching designs

Avoid if

  • Applications requiring more than 40 V drain-source margin
  • Designs requiring verified automotive or other formal qualification
  • Designs needing confirmed RoHS, REACH, MSL, or mechanical-package data

Check before use

  • Use the 3.5 mΩ maximum RDS(on) specification at VGS=10 V and ID=35 A for conservative conduction-loss calculations.
  • Derate drain current and power dissipation for the actual case temperature and PCB thermal design.
  • Validate gate-charge data because the supplied Qg and Qgd entries appear inconsistent.

Key specifications

Drain-source voltage
40 V
Continuous drain current
100 A at TC=25°C
Maximum RDS(on)
3.5 mΩ at VGS=10 V, ID=35 A
Package
DFN5*6-8
Gate-source voltage
±20 V
Junction temperature range
-55°C to +150°C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC load switchingCompact power-control boards

Datasheet

9f5479598c7e03d3012d1ab80280b88b_DON100N04.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DON100N04: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON100N04 is a DOINGTER N-channel power MOSFET in an 8-pin DFN5*6 package. It is rated for 40 V drain-source voltage and 100 A continuous drain current at TC=25°C.