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DON120N02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON120N02 product

DON120N02

Component

N-channel MOSFET20 V120 A4 mΩDFN5*6-8

DON120N02 is a 20 V N-channel MOSFET for low-voltage, high-current switching where a 4.5 V gate drive and low on-resistance are suitable.

Best for

  • Low-voltage power switching
  • High-current load switching
  • Power-management stages with 4.5 V gate drive

Avoid if

  • Drain-source voltage can exceed 20 V including transients
  • Thermal performance cannot be supported by the PCB or heatsinking

Check before use

  • Maximum VDS transient margin
  • RDS(on) at the available gate-drive voltage
  • DFN5*6-8 land pattern and thermal design

Key specifications

Drain-source voltage
20 V
Continuous drain current
120 A at TC=25°C
RDS(on)
4 mΩ max at VGS=4.5 V, ID=30 A
Gate-source voltage
±12 V
Package
DFN5*6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingLoad switching

Datasheet

b48d88fef51034ce3e7293f9343b39b1_DON120N02.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DON120N02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON120N02 is a DOINGTER N-channel trench power MOSFET in a DFN5*6-8 package. It is rated for 20 V drain-source voltage and 120 A continuous drain current at TC=25°C.