DON120N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON120N06 product

DON120N06

FETs

N-channel MOSFET60 VDFN5×6-83.5 mΩpower MOSFET

DON120N06 is a 60 V N-channel power MOSFET in a DFN5×6-8 package, specified for low on-resistance and high current under case-temperature-controlled conditions.

Best for

  • Low-voltage power switching
  • Compact high-current MOSFET layouts

Avoid if

  • A qualified automotive-grade MOSFET is required
  • Compliance or lifecycle status must be formally documented

Check before use

  • Use sufficient gate drive for the specified RDS(on)
  • Validate board-level thermal resistance
  • Allow margin for drain-source transients

Key specifications

Drain-source voltage
60 V
Continuous drain current
120 A at TC=25°C
RDS(on)
3.5 mΩ max at VGS=10 V, ID=20 A
Package
DFN5×6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingDC-DC convertersLoad switching

CAD Models

Download ECAD models for DON120N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON120N06 is a DOINGTER N-channel trench power MOSFET rated for 60 V drain-source voltage. It is supplied in a DFN5×6-8 surface-mount package.