DON130N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON130N03 product

DON130N03

Component

30 V MOSFETN-channelDFN5×6-83 mΩ max130 Apower switching

DON130N03 is a 30 V N-channel DFN5×6-8 MOSFET specified for low-voltage, high-current switching, with 3 mΩ maximum RDS(on) at 10 V gate drive.

Best for

  • Low-voltage high-current switching
  • Power stages with 10 V gate drive
  • Compact DFN power layouts

Avoid if

  • Drain-source voltage can exceed 30 V including transients
  • Thermal path cannot support the required current
  • A documented lifecycle or compliance declaration is mandatory

Check before use

  • Validate RDS(on) at the actual gate-drive voltage and operating temperature.
  • Use the package thermal data and PCB copper area for junction-temperature calculations.
  • Confirm pin assignment: pins 1-3 source, pin 4 gate, pins 5-8 drain.

Key specifications

Drain-source voltage
30 V
Continuous drain current
130 A at TC=25°C
RDS(on)
3 mΩ max at VGS=10 V, ID=30 A
Gate charge
66 nC typ
Package
DFN5×6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC-DC converter power stagesLoad switching

CAD Models

Download ECAD models for DON130N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON130N03 is a DOINGTER N-channel trench power MOSFET in a DFN5×6-8 surface-mount package. It has a 30 V drain-source rating and an advertised low on-resistance.