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DON180N02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON180N02 product

DON180N02

FETs

N-channel MOSFET20 V180 A2 mΩDFN5×6-8

DON180N02 is a 20 V N-channel power MOSFET intended for low-voltage, high-current switching. It specifies 2 mΩ maximum RDS(on) at 4.5 V gate drive and 30 A drain current.

Best for

  • Low-voltage high-current switching
  • Power-path load switching
  • Synchronous rectification where voltage margin is controlled

Avoid if

  • Drain-source voltage can exceed 20 V including transients
  • Thermal conditions cannot support the required conduction loss
  • A verified compliance or lifecycle declaration is mandatory

Check before use

  • Gate-drive voltage under load
  • PCB and heatsinking thermal resistance
  • Drain overshoot and avalanche exposure
  • Package land pattern and pin assignment

Key specifications

Drain-source voltage
20 V
Continuous drain current
180 A at Tc=25°C
RDS(on)
2 mΩ max at VGS=4.5 V, ID=30 A
Package
DFN5×6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC load switchingConsumer power systems

Datasheet

5f365b8fa300e2fea9f55025b1f11118_DON180N02.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DON180N02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON180N02 is a DOINGTER N-channel trench power MOSFET rated for 20 V drain-to-source voltage. It is supplied in a DFN5×6-8 package with the drain on pins 5 through 8, gate on pin 4, and source on pins 1 through 3.