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DON45P04 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON45P04 product

DON45P04

FETs

P-channel MOSFET-40 VDFN5×6-8low RDS(on)power switching

DON45P04 is a -40 V P-channel power MOSFET for compact high-side or polarity-control switching where low on-resistance is important.

Best for

  • Compact P-channel power switching
  • High-side load switching with negative gate drive

Avoid if

  • Drain-source voltage can approach or exceed -40 V
  • The design cannot provide adequate thermal dissipation

Check before use

  • Verify DFN5×6-8 footprint and pin assignment
  • Validate RDS(on) at the actual gate-drive voltage
  • Derate current for board and ambient temperature

Key specifications

MOSFET polarity
P-channel
Drain-source voltage
-40 V
Continuous drain current
-45 A at TC = 25 °C
RDS(on)
13 mΩ max at VGS = -10 V
Package
DFN5×6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switchingBattery-powered equipment

Datasheet

f106f3c9a2d928168ed7d35b52da2809_DON45P04.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DON45P04: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON45P04 is a DOINGTER P-channel trench MOSFET rated for -40 V drain-source voltage. It is supplied in a DFN5×6-8 surface-mount package with an exposed drain connection.