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DON55N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON55N06 product

DON55N06

Component

60 VN-channel MOSFET55 A10 mΩ max18.4 nC typDFN5*6-8

DON55N06 is a 60 V N-channel MOSFET in DFN5*6-8 with 10 mΩ maximum RDS(on) at 10 V gate drive and 55 A continuous current rating at TC=25 °C.

Best for

  • Low-voltage power switching with 10 V gate drive
  • Applications needing low RDS(on) in a compact DFN package

Avoid if

  • A qualified automotive, RoHS, REACH, or lifecycle status is required but not separately confirmed
  • The design cannot provide adequate thermal dissipation

Check before use

  • Maximum RDS(on) at the actual gate-drive voltage
  • PCB thermal layout and junction temperature
  • Footprint and exposed-pad implementation

Key specifications

Drain-source voltage
60 V
Continuous drain current
55 A at TC=25 °C
On-resistance
10 mΩ max at VGS=10 V, ID=20 A
Package
DFN5*6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingDC-DC convertersLoad switching

Datasheet

e4e86d50eead80aebe090715a5dcbb6b_DON55N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DON55N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON55N06 is a DOINGTER N-channel power MOSFET using SGT trench technology. It has a 60 V drain-source rating and is supplied in a DFN5*6-8 surface-mount package.