DON607 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON607 product

DON607

Component

30 V MOSFETcomplementary MOSFETN-channelP-channelDFN5×6-8Dlow RDS(on)

DON607 is a complementary 30 V N+P MOSFET pair in a compact DFN5×6-8D package, intended for low-voltage power switching where both high-side and low-side MOSFET functions are needed.

Best for

  • Compact complementary MOSFET switching stages
  • Low-voltage power-path circuits

Avoid if

  • A verified automotive qualification is required
  • Compliance or lifecycle documentation is mandatory but unavailable

Check before use

  • N-channel and P-channel gate-drive polarity
  • DFN5×6-8D PCB footprint and exposed-pad layout
  • Thermal performance at the intended drain current

Key specifications

Configuration
N-channel + P-channel MOSFET
Drain-source voltage
30 V / -30 V
N-channel RDS(on)
18 mΩ typ. at VGS=10 V
P-channel RDS(on)
28 mΩ typ. at VGS=-10 V
Package
DFN5×6-8D

Compliance & Environment

RoHS
-
REACH
-
MSL
MSL 3
ECCN
-
HTSUS
-

Application

Power switchingGeneral complementary MOSFET circuits

CAD Models

Download ECAD models for DON607: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON607 is a DOINGTER complementary trench MOSFET containing one 30 V N-channel MOSFET and one -30 V P-channel MOSFET in a DFN5×6-8D package.