DON60N10-L AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON60N10-L product

DON60N10-L

MOSFETs

100 V MOSFETN-channel60 ADFN5x6-8power semiconductor

DON60N10-L is a 100 V N-channel power MOSFET rated for 60 A continuous drain current and specified with low on-resistance in a DFN5x6-8 package.

Best for

  • low-voltage power switching
  • load switching
  • motor-control switching stages

Avoid if

  • the application exceeds the 100 V drain-source rating
  • the design requires verified automotive, RoHS, REACH, or lifecycle data

Check before use

  • gate-drive voltage and RDS(on)
  • thermal resistance and PCB layout
  • avalanche and transient conditions

Key specifications

VDS
100 V
ID
60 A at TC=25 °C
RDS(on)
8.6 mΩ typ. at VGS=10 V
Package
DFN5x6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
MSL3
ECCN
-
HTSUS
-

Application

Power switchingMotor controlIndustrial load switching

CAD Models

Download ECAD models for DON60N10-L: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET using SGT technology, with a 100 V drain-source rating, 60 A continuous drain-current rating at TC=25 °C, and DFN5x6-8 packaging.