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DON80N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DON80N03 product

DON80N03

FETs

N-channel MOSFET30 V80 A5 mΩDFN5x6-8

DON80N03 is a 30 V N-channel DFN5x6-8 power MOSFET with 5 mΩ maximum RDS(on) at 10 V gate drive and a stated 80 A continuous-current rating at TC=25°C.

Best for

  • Low-voltage power switching
  • Compact PCB power stages
  • Applications with 10 V gate drive

Avoid if

  • Drain-source voltage can exceed 30 V
  • Required package qualification or compliance status is unknown
  • Thermal design cannot support high current

Check before use

  • RDS(on) at the actual gate-drive voltage
  • PCB thermal resistance and copper area
  • Peak current and avalanche conditions
  • DFN5x6-8 footprint and pin assignment

Key specifications

Drain-source voltage
30 V
Continuous drain current
80 A at TC=25°C
RDS(on)
5 mΩ max at VGS=10 V, ID=20 A
Package
DFN5x6-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC load switching

Datasheet

1447253561ca3fc71aafef053e928fea_DON80N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DON80N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DON80N03 is a DOINGTER N-channel trench power MOSFET in a DFN5x6-8 surface-mount package. It is rated for 30 V drain-source voltage and ±20 V gate-source voltage.