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DOP10P10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP10P10 product

DOP10P10

MOSFETs - Single

P-channel MOSFETTO-220-100 Vpower transistor

DOP10P10 is a -100 V P-channel MOSFET for low-side or polarity-control switching where its TO-220 through-hole package and specified gate-drive conditions are suitable.

Best for

  • P-channel power switching
  • Through-hole power circuits

Avoid if

  • A surface-mount package is required
  • The design requires guaranteed low RDS(on) at gate voltages other than the specified conditions

Check before use

  • Thermal resistance and heat sinking
  • Gate-source voltage limits
  • Pinout and PCB footprint

Key specifications

Channel
P-channel
VDS
-100 V
Continuous ID
-10 A
RDS(on)
300 mΩ max at VGS=-10 V, ID=-3 A

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingIndustrial switching

Datasheet

f0f419ff3e133104e3c4e62c522cbc87_DOP10P10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOP10P10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP10P10 is a P-channel MOSFET from DOINGTER with a -100 V drain-source rating, -10 A continuous drain-current rating, and TO-220 through-hole package.