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DOP12P10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP12P10 product

DOP12P10

MOSFETs - Single

P-channel MOSFET100 VTO-220power switching

DOP12P10 is a 100 V P-channel MOSFET in a three-lead TO-220 package, intended for power switching with a specified 200 mΩ maximum on-resistance at VGS=-10 V.

Best for

  • High-side or load-switching circuits where a P-channel MOSFET is appropriate
  • Moderate-current power switching

Avoid if

  • The design requires low-voltage logic-level enhancement without a suitable negative gate drive
  • The application exceeds the specified voltage, current, thermal, or SOA limits

Check before use

  • Maximum VDS and VGS transients
  • RDS(on) at the intended gate voltage and current
  • Heatsink and PCB thermal path

Key specifications

Polarity
P-channel MOSFET
VDS
-100 V
ID
-12 A at TC=25 °C
RDS(on)
200 mΩ max at VGS=-10 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switching

Datasheet

963253c44c1ae7ca6a0266ced609a4ed_DOP12P10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOP12P10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP12P10 is a P-channel trench power MOSFET with a -100 V drain-source rating and a TO-220 package.