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DOP17P06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP17P06 product

DOP17P06

FETs

P-channel MOSFET-60 VTO-220Through-holePower switching

DOP17P06 is a TO-220 P-channel MOSFET for switching applications requiring up to -60 V and specified RDS(on) up to 90 mΩ at a -10 V gate drive.

Best for

  • P-channel high-side switching
  • Moderate-current power switching
  • Through-hole power designs

Avoid if

  • A lower RDS(on) is required with only -4.5 V gate drive
  • Surface-mount assembly is required
  • Verified compliance or lifecycle documentation is mandatory

Check before use

  • Calculate conduction loss at the actual gate voltage and junction temperature
  • Keep VGS within the ±20 V absolute maximum rating
  • Provide thermal management appropriate for the TO-220 package

Key specifications

MOSFET type
P-Channel
Drain-source voltage
-60 V
Continuous drain current
-17 A at TC = 25 °C
Maximum on-resistance
90 mΩ at VGS = -10 V, ID = -12 A
Package
TO-220, 3-pin

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power load switchingHigh-side switching

Datasheet

e4c55508e0158f85c5e2a3d47a7873da_DOP17P06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOP17P06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP17P06 is a DOINGTER P-channel trench MOSFET in a 3-pin TO-220 package. It is rated for -60 V drain-source voltage and -17 A continuous drain current at TC = 25 °C.