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DOP20N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP20N06 product

DOP20N06

MOSFETs - Single

N-channel MOSFET60 V20 ATO-22035 mΩ max19 nC typ

DOP20N06 is a 60 V N-channel TO-220 MOSFET rated for 20 A continuous drain current at TC=25°C. It specifies 35 mΩ maximum RDS(on) with a 10 V gate drive.

Best for

  • 60 V low-side switching where a TO-220 MOSFET is suitable
  • Designs using approximately 10 V gate drive
  • Applications with adequate heatsinking or controlled case temperature

Avoid if

  • A verified logic-level MOSFET requirement below 4.5 V gate drive
  • A compliance-qualified part is required without separate RoHS, REACH, or qualification evidence
  • The application requires specified package dimensions or mounting data

Check before use

  • Thermal resistance and heatsink conditions
  • Gate-drive amplitude and switching waveform
  • Voltage transient margin below 60 V
  • Current derating at operating case temperature

Key specifications

Drain-source voltage
60 V
Continuous drain current
20 A at TC=25°C
RDS(on)
35 mΩ max at VGS=10 V, ID=20 A
Gate charge
19 nC typ
Package
TO-220, 3-pin

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General power switchingThrough-hole power stages

Datasheet

f5ca744cb3f2e79a99d59fc6ee7f7273_DOP20N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOP20N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP20N06 is a DOINGTER N-channel trench power MOSFET in a 3-pin TO-220 package. The pin identification shown in the datasheet is gate on pin 1, drain on pin 2, and source on pin 3.