DOP30N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP30N06 product

DOP30N06

MOSFETs

N-channel MOSFET60 V MOSFETTO-22030 A power transistor

DOP30N06 is a 60 V N-channel power MOSFET rated for up to 30 A continuous drain current under the stated case-temperature conditions.

Best for

  • Low-voltage power switching
  • Load switching
  • Motor-control stages

Avoid if

  • The circuit requires operation near or above 60 V
  • The design cannot provide suitable thermal management

Check before use

  • Actual gate-drive voltage
  • Maximum transient drain voltage
  • Case and junction temperature
  • Body-diode and switching behavior

Key specifications

VDS
60 V
ID
30 A at TC=25 C
RDS(on)
30 mOhm max at VGS=10 V
Package
TO-220

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingMotor controlIndustrial load switching

CAD Models

Download ECAD models for DOP30N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP30N06 is a DOINGTER N-channel trench power MOSFET in a three-pin TO-220 through-hole package.