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DOP45N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP45N10 product

DOP45N10

MOSFETs & IGBTs

N-channel MOSFET100 V45 ATO-220power switching

DOP45N10 is a 100 V N-channel MOSFET in a 3-pin TO-220 package, specified for 45 A continuous drain current and 16 mΩ maximum on-resistance at 10 V gate drive.

Best for

  • Low-side power switching
  • DC-DC converters
  • Motor and load switching

Avoid if

  • The application requires a different package or pinout
  • The design needs verified automotive, lifecycle, or compliance data not present in the datasheet

Check before use

  • 100 V drain-source rating with adequate transient margin
  • Gate drive at 4.5 V or 10 V according to the applicable RDS(on) specification
  • Thermal dissipation and case temperature

Key specifications

VDS
100 V
ID
45 A at TC=25 °C
RDS(on)
16 mΩ maximum at VGS=10 V
Package
TO-220, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingMotor controlIndustrial load switching

Datasheet

ba27e38e9392014a6e5ad3069abe52ca_DOP45N10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOP45N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP45N10 is an N-channel power MOSFET from DOINGTER, rated at 100 V drain-source voltage and supplied in a TO-220 through-hole package.