For BusinessPricing
Request a demo

DOP50N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP50N10 product

DOP50N10

FETs

N-channel MOSFET100 V50 ATO-22022 mΩ

DOP50N10 is a 100 V N-channel MOSFET in a 3-pin TO-220 package. Its datasheet specifies 50 A continuous drain current at TC=25 °C and 22 mΩ maximum RDS(on) at VGS=10 V.

Best for

  • General low-side power switching
  • Through-hole power conversion and industrial circuits

Avoid if

  • The design requires verified automotive qualification or documented compliance certifications
  • The design requires guaranteed lifecycle or supply information

Check before use

  • Thermal dissipation and heatsink arrangement
  • Gate-drive voltage and switching losses
  • TO-220 footprint and pin assignment
  • Current derating at the actual case temperature

Key specifications

Drain-source voltage
100 V
Continuous drain current
50 A at TC=25 °C
RDS(on)
18 mΩ typical, 22 mΩ maximum at VGS=10 V
Package
TO-220, 3 pins, 2.54 mm pitch

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingIndustrial switching

Datasheet

fa56dc108925df0df7f6abcb16a62d16_DOP50N10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOP50N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP50N10 is an N-channel power MOSFET from DOINGTER, rated at 100 V and supplied in a TO-220 through-hole package.