DOP70P03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOP70P03 product

DOP70P03

FETs

P-channel MOSFET-30 VTO-2207.5 mΩPower switching

DOP70P03 is a TO-220 P-channel MOSFET rated to -30 V and -70 A at TC=25°C, with 7.5 mΩ maximum RDS(on) at -10 V gate drive.

Best for

  • Low-voltage P-channel power switching
  • High-side load switching where P-channel control is appropriate
  • Through-hole power designs using TO-220

Avoid if

  • Drain-source voltage can exceed -30 V
  • The design cannot provide adequate thermal management
  • A verified lifecycle or compliance declaration is mandatory

Check before use

  • Gate-source polarity and voltage margin
  • RDS(on) at actual gate-drive voltage and junction temperature
  • Heatsink and case-temperature assumptions
  • TO-220 drain-tab connection

Key specifications

MOSFET type
P-Channel
Drain-source voltage
-30 V
Continuous drain current
-70 A at TC=25°C
RDS(on)
7.5 mΩ max at VGS=-10 V, ID=-20 A
Package
TO-220, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switching

CAD Models

Download ECAD models for DOP70P03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOP70P03 is a DOINGTER P-channel trench power MOSFET in a 3-pin TO-220 package. Pin 1 is gate, pin 2 and the tab are drain, and pin 3 is source.