DOPF12N65 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOPF12N65 product

DOPF12N65 is a 650 V N-channel power MOSFET rated for 12 A continuous drain current at Tc=25 °C, supplied in a 3-pin TO-220F package.

Best for

High-voltage power switching
Industrial power-conversion circuits
Applications using a through-hole TO-220F package

Avoid if

A low-voltage MOSFET or very low conduction loss is required
The design cannot provide adequate thermal management

Check before use

VDS transients and avalanche energy
RDS(on) at the actual gate voltage and operating temperature
Continuous-current derating and switching frequency

Key specifications

VDS: 650 V
Continuous ID: 12 A at Tc=25 °C
RDS(on): 650 mΩ max at VGS=10 V, ID=6 A
Package: TO-220F, 3 pins

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switchingIndustrial power supplies

Datasheet

0104915e7431fc455a52b2da470d9333_DOPF12N65.pdf

800 KB

CAD Models

Download ECAD models for DOPF12N65: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650 V N-channel power MOSFET from DOINGTER with a 12 A continuous drain-current rating at Tc=25 °C and a TO-220F package.