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DOPF20N65 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOPF20N65 product

DOPF20N65

FETs

650 V MOSFET20 A power transistorTO-220FN-channel

DOPF20N65 is a 650 V N-channel power MOSFET with a TO-220F through-hole package and 20 A continuous drain-current rating at Tc=25 °C.

Best for

  • High-voltage power switching
  • Through-hole industrial power circuits

Avoid if

  • The design requires low conduction loss without adequate heatsinking
  • The circuit exceeds the 650 V drain-source rating

Check before use

  • Gate-drive voltage and switching frequency
  • Case temperature and power dissipation
  • Avalanche and body-diode operating conditions

Key specifications

Type
N-channel MOSFET
VDS
650 V
ID
20 A at Tc=25 °C
RDS(on)
320 mΩ typ.; 350 mΩ max. at VGS=10 V
Package
TO-220F

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High-voltage power conversionIndustrial switching

Datasheet

4c42d56867fae71848f75ae4129456ed_DOPF20N65.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOPF20N65: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel silicon power MOSFET rated for 650 V drain-source voltage and 20 A continuous drain current under the stated case-temperature conditions.