DOS10DN02 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOS10DN02 product

DOS10DN02 is a dual 20 V N-channel MOSFET for low-voltage switching where two MOSFET channels are needed in an SOP-8D package.

Best for

Low-voltage load switching
Compact dual-MOSFET power stages

Avoid if

A verified compliance declaration is required
Package dimensions or MSL data are mandatory before design release

Check before use

Confirm the PCB footprint from a verified package drawing
Calculate conduction and switching losses at the actual gate voltage
Validate thermal rise for the board copper area

Key specifications

Configuration: Dual N-channel MOSFET
Drain-source voltage: 20 V
Continuous drain current: 10 A at TA=25 °C
Maximum RDS(on): 21 mΩ at VGS=4.5 V, ID=4 A
Package: SOP-8D

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Low-voltage power switchingLoad switching

Datasheet

374efcb6bea092d35bc99f1fb83e8e24_DOS10DN02.pdf

800 KB

CAD Models

Download ECAD models for DOS10DN02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOS10DN02 is a DOINGTER dual N-channel trench MOSFET in an SOP-8D package. Each MOSFET is rated for 20 V drain-source voltage.