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DOS12P03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOS12P03 product

DOS12P03

FETs

P-channel MOSFET-30 V MOSFETSOP-8low RDS(on)

DOS12P03 is a -30 V P-channel MOSFET in an SOP-8 package. It provides up to -12 A continuous drain current at 25 °C and 14 mΩ maximum RDS(on) at VGS=-10 V.

Best for

  • Low-side or load-switching stages requiring a P-channel MOSFET
  • Power switching where low RDS(on) and moderate gate charge are useful

Avoid if

  • The circuit requires a drain-source rating above 30 V
  • The application needs verified automotive, qualification, or lifecycle data not stated in the supplied datasheet

Check before use

  • RDS(on) at the actual gate-source voltage
  • Thermal dissipation and current derating
  • Gate-source voltage limits and switching conditions
  • Package dimensions and PCB land pattern

Key specifications

Channel
P-channel MOSFET
VDS
-30 V
Continuous ID at 25 °C
-12 A
RDS(on), max.
14 mΩ at VGS=-10 V
Package
SOP-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switching

Datasheet

cf927f09d8925404997dc9f15b9eed6a_DOS12P03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOS12P03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOS12P03 is a DOINGTER P-channel trench MOSFET with a -30 V drain-source voltage rating, -12 A continuous drain-current rating at 25 °C, and an SOP-8 package.