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DOS18N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOS18N03 product

DOS18N03

FETs

N-channel MOSFET30 VSOP-86 mΩ18 A

DOS18N03 is a 30 V N-channel SOP-8 MOSFET for low-voltage power switching, specified at 18 A continuous drain current and 6 mΩ maximum RDS(on) with a 10 V gate drive.

Best for

  • Low-voltage power switching
  • Low-side switching with a 10 V gate drive
  • Compact SOP-8 MOSFET designs

Avoid if

  • Drain-source voltage can approach or exceed 30 V including transients
  • A guaranteed low RDS(on) is required with gate drive below 4.5 V
  • Thermal conditions cannot support the required drain current

Check before use

  • VDS transient margin
  • Gate-drive voltage
  • PCB and junction thermal performance

Key specifications

Drain-source voltage
30 V
Continuous drain current
18 A at TA = 25°C
RDS(on) at 10 V gate drive
6 mΩ max at ID = 10 A
Package
SOP-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingMotor-control switching stagesGeneral load switching

Datasheet

dc6e67abc5810a9b33828516caf9c92e_DOS18N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOS18N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOS18N03 is a DOINGTER N-channel trench MOSFET in an SOP-8 package. It is rated for 30 V drain-source voltage and has a ±20 V gate-source voltage limit.