DOS4606H Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOS4606H product

DOS4606H is a complementary 30 V N-channel and P-channel MOSFET array in SOP-8D for compact low-voltage power-switching designs.

Best for

Compact complementary low-voltage switching stages
Power-path and load-switch circuits
Circuits requiring N-channel and P-channel MOSFETs in one package

Avoid if

Drain-source voltage can exceed 30 V
The design requires documented automotive qualification
The application needs confirmed compliance or lifecycle status

Check before use

N-channel RDS(on): 24 mΩ max at VGS=10 V and ID=5 A
P-channel RDS(on): 45 mΩ max at VGS=-10 V and ID=-5 A
Maximum gate-source voltage is ±20 V
Junction temperature limit is +150 °C

Key specifications

MOSFET configuration: Complementary N-channel + P-channel
Drain-source voltage: 30 V / -30 V
Continuous drain current: 6.3 A / -6 A at TA=25 °C
On-resistance: 24 mΩ max N-channel; 45 mΩ max P-channel
Package: SOP-8D, 8 pins, 1.27 mm pitch

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Low-voltage power switchingCompact load switchingComplementary MOSFET stages

Datasheet

5c86361880d841c784acc4da68938b54_DOS4606H.pdf

800 KB

CAD Models

Download ECAD models for DOS4606H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

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Design and risk insights

Questions & answers

DOS4606H is a dual complementary trench MOSFET array containing one 30 V N-channel MOSFET and one -30 V P-channel MOSFET in an SOP-8D package.