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DOS6N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOS6N06 product

DOS6N06

MOSFETs - Single

N-channel MOSFET60 VSOP-836 mΩ max6 A

DOS6N06 is a 60 V N-channel SOP-8 MOSFET with 36 mΩ maximum RDS(on) at 10 V gate drive and a 6 A continuous current rating at TA = 25 °C.

Best for

  • Low-voltage power switching with 10 V gate drive
  • Compact SOP-8 load switching

Avoid if

  • Drain-source voltage can approach or exceed 60 V
  • Thermal design cannot support package dissipation
  • A documented lifecycle or compliance status is mandatory

Check before use

  • Confirm VDS transient margin
  • Calculate RDS(on) loss at operating temperature
  • Validate SOP-8 PCB thermal layout
  • Confirm current stock and purchasing terms with the supplier

Key specifications

Drain-source voltage
60 V
Continuous drain current
6 A at TA = 25 °C
Maximum RDS(on)
36 mΩ at VGS = 10 V, ID = 4 A
Package
SOP-8
Total gate charge
19 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-side power switchingDC load controlCompact consumer power circuits

Datasheet

f07d301308167ef60f05857894573694_DOS6N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOS6N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOS6N06 is a DOINGTER N-channel trench MOSFET in an SOP-8 package. It has a 60 V drain-source rating, ±20 V gate-source rating, and 6 A continuous drain-current rating at TA = 25 °C.