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DOS9N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOS9N03 product

DOS9N03

FETs

N-channel MOSFET30 V9 ASOP-8Low RDS(on)Low gate charge

DOS9N03 is a 30 V N-channel SOP-8 MOSFET for low-voltage power switching, with 20 mΩ maximum on-resistance at a 10 V gate drive.

Best for

  • Low-voltage N-channel switching
  • Compact SOP-8 power stages

Avoid if

  • Drain-source voltage can exceed 30 V
  • Thermal performance cannot support the required dissipation

Check before use

  • Confirm the SOP-8 source, gate, and drain pin assignment
  • Calculate conduction loss at the actual VGS and load current
  • Validate junction temperature using the target PCB layout

Key specifications

MOSFET type
N-channel trench MOSFET
Drain-source voltage
30 V
Continuous drain current
9 A
On-resistance
20 mΩ max at VGS=10 V, ID=5.5 A
Package
SOP-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingGeneral electronic switching circuits

Datasheet

6415240089a51eddc6597f0d8fa97b98_DOS9N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOS9N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOS9N03 is a DOINGTER N-channel trench power MOSFET in an SOP-8 package. It is rated for 30 V drain-source voltage and 9 A continuous drain current at TA=25°C.