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DOU20P06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOU20P06 product

DOU20P06

FETs

P-channel MOSFET-60 V-20 ATO-25168 mΩ

DOU20P06 is a -60 V P-channel TO-251 MOSFET for power switching, with -20 A continuous current rating and 68 mΩ maximum RDS(on) at -10 V gate drive.

Best for

  • P-channel high-side switching
  • Moderate-voltage load switching
  • Power circuits with -10 V gate drive

Avoid if

  • A guaranteed low-loss design must operate only with a weak gate drive
  • Compliance or lifecycle documentation is mandatory but unavailable
  • PCB footprint cannot accommodate the selected TO-251 outline

Check before use

  • Use the applicable RDS(on) value for the actual VGS.
  • Derate current and dissipation for case temperature.
  • Confirm pinout: pin 1 gate, pin 2 drain, pin 3 source.

Key specifications

MOSFET polarity
P-Channel
Drain-source voltage
-60 V
Continuous drain current
-20 A
On-resistance
68 mΩ max at VGS = -10 V
Package
TO-251, 3-pin

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingHigh-side load switchingGeneral electronic load control

Datasheet

bedc385f606db3767b9fc181f651b405_DOU20P06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOU20P06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOU20P06 is a DOINGTER P-channel trench MOSFET in a 3-pin TO-251 package. It is rated for -60 V drain-source voltage and -20 A continuous drain current at TC = 25°C.