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DOU30N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOU30N06 product

DOU30N06

FETs

N-channel MOSFET60 V MOSFET30 A MOSFETTO-251Trench MOSFET

DOU30N06 is a 60 V N-channel TO-251 MOSFET for switching applications requiring up to 30 A at a 25°C case temperature. Its specified RDS(on) is 30 mΩ maximum with a 10 V gate drive.

Best for

  • 60 V low-side switching
  • General power switching where TO-251 thermal mounting is suitable

Avoid if

  • The design needs documented automotive qualification
  • A verified RoHS, REACH, lifecycle, or package-dimension record is mandatory

Check before use

  • TO-251 land pattern and mounting arrangement
  • Junction temperature and heatsinking at load current
  • Gate-drive voltage and switching losses

Key specifications

Drain-source voltage
60 V
Continuous drain current
30 A at TC=25°C
Maximum RDS(on)
30 mΩ at VGS=10 V, ID=15 A
Package
TO-251
Maximum junction temperature
175°C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingMotor-control switchingIndustrial DC load switching

Datasheet

5c81b41f851f8c5092443c06a4c56c36_DOU30N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOU30N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOU30N06 is a DOINGTER N-channel trench MOSFET in a TO-251 package. It has a 60 V drain-source rating, a ±20 V gate-source limit, and a 175°C maximum junction temperature.