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DOW16P02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOW16P02 product

DOW16P02

FETs

P-channel MOSFET-20 V-16 A16 mΩSOT-89Power switching

DOW16P02 is a -20 V P-channel SOT-89 MOSFET rated for -16 A continuous drain current, with 16 mΩ maximum RDS(on) at -4.5 V gate drive.

Best for

  • Low-voltage P-channel switching with -4.5 V gate drive
  • Compact SOT-89 power-switch stages

Avoid if

  • Drain-source voltage can approach or exceed 20 V including transients
  • Guaranteed compliance or lifecycle documentation is required but unavailable

Check before use

  • Gate-drive voltage under all operating conditions
  • Thermal rise and PCB copper area
  • Voltage-spike margin
  • Current derating at operating temperature

Key specifications

Channel
P-channel
Drain-source voltage
-20 V
Continuous drain current
-16 A at TC = 25 °C
On resistance
16 mΩ max at VGS = -4.5 V, ID = -10 A
Package
SOT-89, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingLoad switching

Datasheet

1e0c29126e8b0f25e948725d084d6ca2_DOW16P02.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOW16P02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOW16P02 is a DOINGTER P-channel trench MOSFET in a 3-pin SOT-89 package. It has a -20 V drain-source rating and a -16 A continuous drain-current rating at TC = 25 °C.