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DOW5N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOW5N10 product

DOW5N10

FETs

N-channel MOSFET100 V MOSFETSOT-895 ATrench MOSFET

DOW5N10 is a 100 V N-channel SOT-89 MOSFET intended for low-power switching where approximately 120 mΩ maximum RDS(on) at a 10 V gate drive is acceptable.

Best for

  • Low-side MOSFET switching with 10 V gate drive
  • Compact 100 V switching stages
  • Moderate-current loads with controlled thermal conditions

Avoid if

  • Applications requiring a verified logic-level low-loss MOSFET
  • High continuous current without thermal validation
  • Designs requiring stated automotive or compliance qualification

Check before use

  • VGS drive level and absolute ±20 V gate rating
  • RDS(on) loss at operating junction temperature
  • SOT-89 PCB copper area and thermal path
  • Drain-voltage transient margin below 100 V

Key specifications

Drain-source voltage
100 V
Continuous drain current
5 A at TC = 25 °C
On-resistance
120 mΩ max at VGS = 10 V, ID = 3 A
Gate-source voltage
±20 V
Package
SOT-89, 3-pin

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-side power switchingGeneral load switching

Datasheet

5d2aacd7be9ac50912454396c7e1aa2f_DOW5N10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOW5N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOW5N10 is a DOINGTER N-channel trench MOSFET in a 3-pin SOT-89 package. Its key ratings are 100 V VDS, 5 A continuous drain current at TC = 25 °C, and 120 mΩ maximum RDS(on) at VGS = 10 V and ID = 3 A.