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DOZ15N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOZ15N06 product

DOZ15N06

MOSFETs - Single

N-channel MOSFET60 V15 ADFN3*3-8low RDS(on)

DOZ15N06 is a 60 V N-channel power MOSFET for compact switching designs requiring up to 15 A continuous current at TC=25°C and low on-resistance.

Best for

  • Compact low-side MOSFET switching
  • 60 V power rails
  • Gate drives near 10 V

Avoid if

  • Drain voltage can exceed 60 V including transients
  • Thermal path cannot support required conduction and switching losses
  • Qualification or compliance documentation is mandatory but unavailable

Check before use

  • Verify RDS(on) at the intended gate-drive voltage
  • Calculate junction temperature using the actual PCB thermal path
  • Check avalanche and switching-stress margins for the application

Key specifications

Drain-source voltage
60 V
Continuous drain current
15 A at TC=25°C
Maximum RDS(on)
36 mΩ at VGS=10 V, ID=10 A
Package
DFN3*3-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingDC load switching

Datasheet

3369692bcd905853c25d96b6e8483d40_DOZ15N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOZ15N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOZ15N06 is a DOINGTER N-channel trench MOSFET in a DFN3*3-8 package. It is rated for 60 V drain-source voltage and 15 A continuous drain current at TC=25°C.