DOZ40P02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOZ40P02 product

DOZ40P02

MOSFETs - Single

P-channel MOSFET-20 V-40 A9 mΩDFN3×3-8

DOZ40P02 is a compact -20 V P-channel MOSFET for low-voltage power switching, specified at up to -40 A and 9 mΩ maximum RDS(on) with -4.5 V gate drive.

Best for

  • Low-voltage high-side switching
  • Compact power-path switching

Avoid if

  • Drain-source voltage can exceed -20 V
  • Gate drive cannot adequately enhance the MOSFET
  • Thermal design cannot support high current

Check before use

  • RDS(on) is specified at -4.5 V and -2.5 V gate drive.
  • Continuous current ratings are specified at case temperature, not necessarily on a PCB.
  • Confirm package pad layout and heat dissipation.

Key specifications

MOSFET polarity
P-Channel
Drain-source voltage
-20 V
Continuous drain current
-40 A
RDS(on)
9 mΩ max at VGS = -4.5 V
Package
DFN3×3-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingBattery-powered load switching

CAD Models

Download ECAD models for DOZ40P02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOZ40P02 is a DOINGTER P-channel trench MOSFET in a DFN3×3-8 surface-mount package. Its drain-source voltage rating is -20 V.