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DOZ55N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOZ55N03 product

DOZ55N03

FETs

N-channel MOSFET30 V55 A5 mΩDFN3×3-8power MOSFET

DOZ55N03 is a 30 V N-channel DFN3×3-8 MOSFET with 5 mΩ maximum on-resistance at 10 V gate drive and a 55 A TC=25°C current rating.

Best for

  • Low-voltage power switching with adequate thermal design
  • Applications using 10 V gate drive
  • Compact DFN3×3 MOSFET footprints

Avoid if

  • Drain-source voltage can approach or exceed 30 V including transients
  • The design cannot dissipate conduction and switching losses through the PCB
  • Required compliance or lifecycle status must be documented

Check before use

  • Confirm maximum VDS transient margin
  • Calculate RDS(on) losses at operating junction temperature
  • Follow the supplied DFN3×3-8 land pattern and assess PCB thermal resistance

Key specifications

Drain-source voltage
30 V
Continuous drain current
55 A at TC=25°C
On-resistance
5 mΩ max at VGS=10 V, ID=20 A
Package
DFN3×3-8
Gate voltage rating
±20 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingFast-switching converters

Datasheet

cfb78e317644efa2414d547df5eada20_DOZ55N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOZ55N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOZ55N03 is a DOINGTER N-channel trench power MOSFET in a DFN3×3-8 surface-mount package. It has a 30 V drain-source rating and a ±20 V gate-source rating.