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DOZ65N02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOZ65N02 product

DOZ65N02

MOSFETs - Single

N-channel MOSFET20 V65 A4.9 mΩDFN3*3-8

DOZ65N02 is a 20 V N-channel MOSFET for low-voltage, high-current switching, with 4.9 mΩ maximum RDS(on) at 4.5 V gate drive and a DFN3*3-8 package.

Best for

  • Low-voltage power switching
  • High-current switching with 4.5 V gate drive
  • Space-constrained DFN power stages

Avoid if

  • Circuits with supply or transient voltages near or above 20 V
  • Designs requiring verified compliance, lifecycle, or package-dimension data

Check before use

  • VDS transient and avalanche conditions
  • RDS(on) at the actual gate-drive voltage and junction temperature
  • PCB footprint and thermal performance

Key specifications

Drain-source voltage
20 V
Continuous drain current
65 A at TC=25°C
Maximum RDS(on)
4.9 mΩ at VGS=4.5 V, ID=25 A
Package
DFN3*3-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingFast switching converters

Datasheet

9cc0bae73553f05628a87cf5d3d58fe0_DOZ65N02.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOZ65N02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOZ65N02 is a DOINGTER N-channel trench MOSFET rated for 20 V drain-to-source voltage. It is supplied in a DFN3*3-8 package and is intended for fast, efficient low-voltage switching.