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DOZ75N02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOZ75N02 product

DOZ75N02

Component

N-channel MOSFET20 V MOSFET75 A MOSFETDFN3x3-8Low RDS(on)

DOZ75N02 is a 20 V N-channel power MOSFET in DFN3x3-8, intended for low-voltage fast-switching designs requiring low conduction loss.

Best for

  • Low-voltage power switching
  • Compact DC power stages
  • Fast-switching load control

Avoid if

  • Drain-source voltage can exceed 20 V
  • A gate drive above ±12 V is possible
  • Thermal performance cannot be validated on the target PCB

Check before use

  • RDS(on) at the intended VGS
  • DFN3x3-8 footprint and exposed-pad thermal layout
  • Peak current and avalanche conditions

Key specifications

Drain-source voltage
20 V
Continuous drain current
75 A at Tc=25°C
On-resistance
4 mΩ max at VGS=4.5 V, ID=30 A
Package
DFN3x3-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingFast switching circuits

Datasheet

371717897f9df94348852693ecccb9ef_DOZ75N02.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOZ75N02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOZ75N02 is a DOINGTER N-channel trench MOSFET in a DFN3x3-8 surface-mount package. It has a 20 V drain-source rating and is specified for low-resistance power switching.