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DRV5013AGQDBZR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DRV5013AGQDBZR product

DRV5013AGQDBZR

Magnetic Sensors - Switches (Solid State)

Hall EffectDigital LatchBipolar

The DRV5013AGQDBZR is a robust, chopper-stabilized digital bipolar latch Hall effect sensor designed for industrial applications requiring high temperature stability and wide voltage range.

Best for

  • Industrial magnetic sensing
  • Applications with wide supply voltage fluctuations

Avoid if

  • Applications requiring analog output
  • Extremely low-power battery designs where 3mA supply current is too high

Check before use

  • Magnetic field strength at the sensor location
  • Pull-up resistor value for bandwidth requirements

Key specifications

Sensitivity
±6 mT
Supply Voltage
2.5 V to 38 V
Output
Open-Drain
Temp Range
-40°C to 125°C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level-1-260C-UNLIM
ECCN
-
HTSUS
-

Application

IndustrialMotor ControlSensor

Datasheet

Texas-Instruments-company-64.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DRV5013AGQDBZR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a digital bipolar latch Hall effect sensor from Texas Instruments, featuring a wide 2.5V to 38V operating range and integrated protection features.