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E030N3P5CL1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E030N3P5CL1 product

E030N3P5CL1

MOSFETs - Single

N-channel MOSFET30 VTO-2523.5 mΩ120 APower switching

E030N3P5CL1 is a 30 V TO-252 N-channel MOSFET for low-voltage high-current switching, specified at 3.5 mΩ maximum RDS(on) with a 10 V gate drive.

Best for

  • Low-voltage DC/DC power stages
  • High-current load switching
  • PD charger power switching
  • Motor-driver switching stages

Avoid if

  • Drain voltage or transient voltage can exceed 30 V
  • A package with confirmed junction-to-ambient thermal data is required
  • A verified lifecycle status is mandatory

Check before use

  • Maximum drain-source transient voltage
  • Gate-drive voltage under load
  • Conduction and switching losses at operating temperature
  • TO-252 PCB thermal layout

Key specifications

Drain-source voltage
30 V
Maximum RDS(on)
3.5 mΩ at VGS = 10 V, ID = 20 A
Continuous drain current
120 A at TC = 25°C
Package
TO-252, 3 pins

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingPD chargersMotor drivers

Datasheet

eff8a863456a95aa58e8f25be385d3e3_E030N3P5CL1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E030N3P5CL1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E030N3P5CL1 is an Existar 30 V N-channel trench power MOSFET in a TO-252 package. It is specified for 120 A continuous drain current at TC = 25°C and 480 A pulsed drain current.