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E030N6P0ML1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E030N6P0ML1 product

E030N6P0ML1

FETs

30 V MOSFETN-channel6 mΩ30 APDFN3.3×3.3Power switching

E030N6P0ML1 is a compact 30 V N-channel MOSFET for low-voltage power switching, with 6 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • Low-voltage DC/DC switching
  • Power switching
  • Motor-driver switching stages

Avoid if

  • Drain-source voltage can exceed 30 V including transients
  • A package or thermal design cannot support the required dissipation
  • A guaranteed low RDS(on) at gate drive below 4.5 V is required

Check before use

  • Use the 10 mΩ maximum RDS(on) specification for 4.5 V gate-drive calculations.
  • Keep VGS within the ±20 V absolute maximum rating.
  • Review the PDFN land pattern and thermal connection to the drain pad.

Key specifications

Drain-source voltage
30 V
Continuous drain current
30 A at TC=25°C
Maximum RDS(on)
6 mΩ at VGS=10 V, ID=15 A
Package
PDFN3.3×3.3

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingMotor drivers

Datasheet

9721725890bcef76a5ec2d46aefda54b_E030N6P0ML1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E030N6P0ML1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E030N6P0ML1 is an Existar N-channel 30 V trench MOSFET supplied in a PDFN3.3×3.3 surface-mount package. Its specified maximum RDS(on) is 6 mΩ at VGS=10 V and ID=15 A.