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E030P4P0HL1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E030P4P0HL1 product

E030P4P0HL1

MOSFETs - Single

P-channel MOSFET30 V4 mΩPDFN5x6Power switch

E030P4P0HL1 is a -30 V P-channel power MOSFET with 4 mΩ maximum RDS(on) at VGS=-10 V, supplied in a PDFN5x6 package.

Best for

  • Low-voltage high-side switching
  • DC/DC conversion
  • Power switching with a negative gate drive

Avoid if

  • Drain-source voltage can exceed 30 V
  • The application cannot provide adequate thermal dissipation
  • A verified pinout or footprint is unavailable

Check before use

  • Use the RDS(on) value for the actual VGS condition
  • Derate current for case temperature and PCB thermal resistance
  • Verify body-diode and switching-loss requirements

Key specifications

Channel
P-Channel
VDS
-30 V
RDS(on)
4 mΩ max at VGS=-10 V, ID=-20 A
Continuous drain current
-99 A at TC=25°C
Package
PDFN5x6

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingPD chargersMotor drivers

Datasheet

0ad91c2570f96ebe0ba772f04a9172cf_E030P4P0HL1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E030P4P0HL1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E030P4P0HL1 is an Existar P-channel trench MOSFET rated for -30 V drain-source voltage. It is housed in a PDFN5x6 surface-mount package and is intended for power switching applications.