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E030P7P8ML1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E030P7P8ML1 product

E030P7P8ML1

MOSFETs

P-channel MOSFET30 V MOSFET7.8 mΩ RDS(on)PDFN3.3X3.3

E030P7P8ML1 is a P-channel, 30 V MOSFET with 7.8 mΩ maximum on-resistance at VGS = -10 V, supplied in an 8-pin PDFN3.3X3.3 package.

Best for

  • Low-side or high-side P-channel power switching
  • DC/DC conversion and power-path switching
  • PD charger and motor-driver applications

Avoid if

  • The application requires a drain-source rating above 30 V
  • The design cannot provide adequate thermal management

Check before use

  • RDS(on) at the available gate voltage
  • Continuous and pulsed current under the real thermal conditions
  • Gate charge and switching-loss requirements

Key specifications

Channel
P-channel
VDS
-30 V
RDS(on)
7.8 mΩ max at VGS = -10 V
Package
PDFN3.3X3.3, 8 pins

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingPD chargersMotor drivers

Datasheet

c561a82f29673199833cf3f3580e8c1c_E030P7P8ML1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E030P7P8ML1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Existar P-channel MOSFET rated for -30 V drain-source voltage. The device has a maximum RDS(on) of 7.8 mΩ at VGS = -10 V and is housed in a PDFN3.3X3.3 package.