E060N2P3AL1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E060N2P3AL1 product

E060N2P3AL1

FETs

N-channel MOSFET60 VTO-2202.3 mOhm180 A

E060N2P3AL1 is a 60 V N-channel TO-220 MOSFET with 2.3 mOhm maximum RDS(on) at a 10 V gate drive. The datasheet specifies 180 A continuous drain current at TC = 25 C.

Best for

  • 60 V power switching
  • DC/DC conversion
  • Power switch stages
  • Motor-drive applications

Avoid if

  • A lower-voltage gate drive requires lower conduction loss than the 4.5 V rating supports
  • The thermal design cannot provide a low-resistance path from the TO-220 case

Check before use

  • Gate-drive level and peak gate-drive capability
  • Heatsink and case-temperature assumptions
  • Switching loss and reverse-recovery requirements

Key specifications

Drain-source voltage
60 V
Maximum RDS(on)
2.3 mOhm at VGS = 10 V
Continuous drain current
180 A at TC = 25 C
Package
TO-220

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingMotor drivers

CAD Models

Download ECAD models for E060N2P3AL1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E060N2P3AL1 is an Existar N-channel power MOSFET rated for 60 V drain-source voltage. It is supplied in a TO-220 package with three leads.